Self-compensating gate driving circuit

ABSTRACT

The present invention provides a self-compensating gate driving circuit, comprising: a plurality of GOA units which are cascade connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part and a pull-down holding part; the pull-up part, the first pull-down part, the bootstrap capacitor part and the pull-down holding circuit are respectively coupled to a Nth gate signal point Q(N) and the Nth horizontal scanning line G(n), and the pull-up controlling part and the transmission part are respectively coupled to the Nth gate signal point Q(N), and the pull-down holding part is inputted with a DC low voltage VSS; the pull-down holding part comprises a first pull-down holding part and a second pull-down holding part to alternately work. The present invention is designed to have the pull-down holding part with self-compensating function to promote the reliability of the long term operation for the gate driving circuit. The influence of the threshold voltage drift to the operation of the gate driving circuit is diminished.

FIELD OF THE INVENTION

The present invention relates to a display skill field, and moreparticularly to a self-compensating gate driving circuit.

BACKGROUND OF THE INVENTION

GOA (Gate Driver on Array) skill is to integrate the TFT (Thin FilmTransistor) of a gate driving circuit on the array substrate and toeliminate the integrated circuit part of the gate driving circuitlocated outside the array substrate. Accordingly, two aspects ofmaterial cost and process is considered to reduce the manufacture costof the productions. GOA skill is a common gate driving circuit skillused in a present TFT-LCD (Thin Film Transistor-Liquid Crystal Display).The manufacture process is simple and provides great applicationpossibilities. The functions of the GOA circuit mainly comprises: thepresent gate line outputs a high level signal with charging thecapacitor of the shift register unit by using the high level signaloutputted from the previous gate line, and then reset is achieved byusing the high level signal outputted from the next gate line.

Please refer to FIG. 1, which is a single level structural diagram of aGOA circuit commonly employed in panel display according to prior art.It comprises: a plurality of GOA units which are cascade connected, anda nth gate driver on array unit controls charge to a nth horizontalscanning line G(n) in a display area, and the nth gate driver on arrayunit comprises pull-up controlling part 1′, a pull-up part 2′, atransmission part 3′, a first pull-down part 4′ (Key pull-down part), abootstrap capacitor part 5′ and a pull-down holding part 6′ (Pull-downholding part). The pull-up part 2′, the first pull-down part 4′, thebootstrap capacitor part 5′ and the pull-down holding part 6′ arerespectively coupled to a Nth gate signal point Q(n) and the Nthhorizontal scanning line G(n), and the pull-up controlling part 1′ andthe transmission part 3′ are respectively coupled to the Nth gate signalpoint Q(n), and the pull-down holding part 6′ is inputted with a DC lowvoltage VSS.

The pull-up controlling part 1′ comprises a first thin film transistorT1′, and a gate of the first thin film transistor T1′ is inputted with atransmission signal ST(N−1) from the N−1th GOA unit, and a drain iselectrically coupled to the N−1th horizontal scanning line G(N−1), and asource is electrically coupled to the Nth gate signal point Q(N); thepull-up part 2′ comprises a second thin film transistor T2′, and a gateof the second thin film transistor T2′ is electrically coupled to theNth gate signal point Q(N), and a drain is inputted with a first highfrequency clock CK or a second high frequency clock XCK, and a source iselectrically coupled to the Nth horizontal scan line G(N); thetransmission part 3′ comprises a third thin film transistor T3′, and agate is electrically coupled to the Nth gate signal point Q(N), and adrain is inputted with a first high frequency clock CK or a second highfrequency clock XCK, and a source outputs a Nth transmission signalST(N); the first pull-down part 4′ comprises a fourth thin filmtransistor T4′, and a gate of the fourth thin film transistor T4′ iselectrically coupled to the N+1th horizontal scan line G(N+1), and adrain is electrically coupled to the Nth horizontal scan line G(N), anda source is inputted with the DC low voltage VSS; a fifth thin filmtransistor T5′, and a gate of the fifth thin film transistor T5′ iselectrically coupled to a N+1th horizontal scan line G(N+1), a drain iselectrically coupled to the Nth gate signal point Q(N), and a source isinputted with the DC low voltage VSS; the bootstrap capacitor part 5′comprises a bootstrap capacitor Cb′; the pull-down holding part 6′comprises a sixth thin film transistor T6′, and a gate of the sixth thinfilm transistor T6′ is electrically coupled to a first circuit pointP(N)′, and a drain is electrically coupled to the Nth horizontal scanline G(N), and a source is inputted with the DC low voltage VSS; aseventh thin film transistor T7′, and a gate of the seventh thin filmtransistor T7′ is electrically coupled to a first circuit point P(N)′,and a drain is electrically coupled to Nth gate signal point Q(N), and asource is inputted with the DC low voltage VSS; an eighth thin filmtransistor T8′, and a gate of the eighth thin film transistor T8′ iselectrically coupled to a second circuit point K(N)′, and a drain iselectrically coupled to the Nth horizontal scan line G(N), and a sourceis inputted with the DC low voltage VSS; a ninth thin film transistorT9′, and a gate of the ninth thin film transistor T9′ is electricallycoupled to the second circuit point K(N)′, and a drain is electricallycoupled to the Nth gate signal point Q(N), and a source is inputted withthe DC low voltage VSS; a tenth thin film transistor T10′, and a gate ofthe tenth thin film transistor T10′ is inputted with a first lowfrequency clock LC1, and a drain is inputted with a first low frequencyclock LC1, and a source is electrically coupled to the first circuitpoint P(N)′; an eleventh thin film transistor T11′, and a gate of theeleventh thin film transistor T11′ is inputted with a second lowfrequency clock LC2, and a drain is inputted with the first lowfrequency clock LC1, and a source is electrically coupled to the firstcircuit point P(N)′; a twelfth thin film transistor T12′, and a gate ofthe twelfth thin film transistor T12′ is inputted with the second lowfrequency clock LC2, and a drain is inputted with the second lowfrequency clock LC2, and a source is electrically coupled to the secondcircuit point K(N)′; a thirteenth thin film transistor T13′, and a gateof the thirteenth thin film transistor T13′ is inputted with the firstlow frequency clock LC1, and a drain is inputted with the second lowfrequency clock LC2, and a source is electrically coupled to the secondcircuit point K(N)′; a fourteenth thin film transistor T14′, and a gateof the fourteenth thin film transistor T14′ is electrically coupled tothe Nth gate signal point Q(N), and a drain is electrically coupled tothe first circuit point P(N)′, a source is inputted with the DC lowvoltage VSS; a fifteenth thin film transistor T15′, and a gate of thefifteenth thin film transistor T15′ is electrically coupled to the Nthgate signal point Q(N), and a drain is electrically coupled to thesecond circuit point K(N)′, and a source is inputted with the DC lowvoltage VSS; wherein the sixth thin film transistor T6′ and the eighththin film transistor T8′ are in charge of keeping the low voltage levelat the Nth horizontal scan line G(N) in the non functioning period. Theseventh thin film transistor T7′ and the ninth thin film transistor T9′are in charge of keeping the low voltage level at the Nth gate signalpoint Q(N) in the non functioning period.

From the viewpoint of overall circuit structure, the pull-down holdingpart 6′ is in a state of having a longer working period. In other word,the first circuit point P(N)′ and the second circuit point K(N)′ are ina positive high voltage state for a long period of time. Under the mostserious voltage stresses are the thin film transistors T6′, T7′, T8′,T9′. Along with the increase of the working period of the gate drivingcircuit, the threshold voltages Vth of the thin film transistors T6′,T7′, T8′, T9′ are gradually increased and the activation currents aregradually decreased. Thus, the Nth horizontal scan line G(N) and the Nthgate signal point Q(N) cannot be well kept in a steady low voltage levelstate. This is a significant factor of influencing the reliability ofthe gate driving circuit.

For an amorphous silicon TFT gate driving circuit, the pull-down holdingpart is essential. In general, the design can be one pull-down holdingpart, or two alternately functioning pull-down holding parts. The mainobjective of the design of the two alternately functioning pull-downholding parts is to the voltage stress applying to the thin filmtransistors T6′, T7′, T8′, T9′ controlled by the first circuit pointP(N)′ and the second circuit point K(N)′ in the pull-down holding part.However, it is found with actual measurement that the four thin filmtransistors T6′, T7′, T8′, T9′ still suffer the most serious voltagestress in the entire gate driving circuit even the design of twoalternately functioning pull-down holding parts is applied. Thus, thethreshold voltages (Vth) of these thin film transistors drift most.

Please refer to FIG. 2a , which is a relationship diagram of the overallcurrent logarithm and the voltage curve of the thin film transistorbefore and after the threshold voltage drift. The full line is therelationship curve of the current logarithm and the voltage that thethreshold voltage drift does not occur. The dotted line is therelationship curve of the current logarithm and the voltage that thethreshold voltage drift occurs. As shown in FIG. 2a , the currentlogarithm Log(Ids) that no threshold voltage drift occurs is larger thanthe current logarithm that the threshold voltage drift occurs under thecircumstance of the same gate-source voltage Vgs. Please refer to FIG.2b , which is a relationship diagram of the overall current and thevoltage curve of the thin film transistor before and after the thresholdvoltage drift. As shown in FIG. 2b , the gate voltage Vg1 that nothreshold voltage drift occurs is larger than the gate voltage Vg2 thatthe threshold voltage drift occurs under the circumstance of the samegate-source current Ids. Thus, after the threshold voltage drift occurs,a larger gate voltage is necessary once reaching the same level sourcecurrent Ids is requested.

As shown in FIG. 2a and FIG. 2b , threshold voltage Vth drifts towardthe positive and the activation current Ion of the thin film transistoris gradually decreased. The activation current Ion of the thin filmtransistor will gradually decrease along with the increase of thethreshold voltage Vth. Thus, to the circuit, the voltage level of theNth horizontal scan line G(N) and the Nth gate signal point Q(N) cannotbe well kept in a steady state. Consequently, an abnormal image displayof the liquid crystal display will happen.

As aforementioned, the most possible failed elements are the thin filmtransistors T6′, T7′, T8′, T9′ of the pull-down holding part. Therefore,this issue has to be solved for promoting the reliabilities of the gatedriving circuit and the liquid crystal display panel. In a common andnormal design, the dimensions of these four thin film transistors T6′,T7′, T8′, T9′ are increased. However, the deactivation leak current ofthe working thin film transistors will increase when the dimensions ofthe thin film transistors are increased and the issue cannot besubstantially solved.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a self-compensatinggate driving circuit to promote the reliability of the long termoperation for the gate driving circuit by a pull-down holding part withself-compensating function. The influence of the threshold voltage driftto the operation of the gate driving circuit is diminished.

For realizing the aforesaid objective, the present invention provides aself-compensating gate driving circuit, comprising: a plurality of GOAunits which are cascade connected, and a Nth GOA unit controls charge toa Nth horizontal scanning line G(n) in a display area, and the Nth GOAunit comprises a pull-up controlling part, a pull-up part, atransmission part, a first pull-down part, a bootstrap capacitor partand a pull-down holding part; the pull-up part, the first pull-downpart, the bootstrap capacitor part and the pull-down holding circuit arerespectively coupled to a Nth gate signal point Q(N) and the Nthhorizontal scanning line G(n), and the pull-up controlling part and thetransmission part are respectively coupled to the Nth gate signal pointQ(N), and the pull-down holding part is inputted with a DC low voltageVSS;

the pull-down holding part comprises a first pull-down holding part anda second pull-down holding part to alternately work;

the first pull-down holding part comprises: a first thin film transistorT1, and a gate of the first thin film transistor T1 is electricallycoupled to the first circuit point P(N), and a drain is electricallycoupled to the Nth horizontal scanning line G(N), and a source isinputted with the DC low voltage VSS; a second thin film transistor T2,and a gate of the second thin film transistor T2 is electrically coupledto the first circuit point P(N), and a drain is electrically coupled tothe Nth gate signal point Q(N), and a source is inputted with the DC lowvoltage VSS; a third thin film transistor T3, and a gate of the thirdthin film transistor T3 is electrically coupled to a first low frequencyclock or a first high frequency clock, and a drain is electricallycoupled to the first low frequency clock or a first high frequencyclock, and a source is electrically coupled to a second circuit pointS(N); a fourth thin film transistor T4, and a gate of the fourth thinfilm transistor T4 is electrically coupled to the Nth gate signal pointQ(N), and a drain is electrically coupled to the second circuit pointS(N), and a source is inputted with the DC low voltage VSS; a fifth thinfilm transistor T5, and a gate of the fifth thin film transistor T5 iselectrically coupled to a N−1th transmission signal ST(N−1), a drain iselectrically coupled to the first circuit point P(N), and a source isinputted with the DC low voltage VSS; a sixth thin film transistor T6,and a gate of the sixth thin film transistor T6 is electrically coupledto a N+1th horizontal scan line G(N+1), and a drain is electricallycoupled to the first circuit point P(N), and a source is electricallycoupled to the Nth gate signal point Q(N); a seventh thin filmtransistor T7, and a gate of the seventh thin film transistor T7 iselectrically coupled to a second low frequency clock LC2 or a secondhigh frequency clock XCK, and a drain is a first low frequency clock LC1or a first high frequency clock CK, and a source is electrically coupledto the second circuit point S(N); an eighth thin film transistor T8, anda gate of the eighth thin film transistor T8 is electrically coupled toa Nth transmission signal ST(N), and a drain is electrically coupled tothe first circuit point P(N), and a source is inputted with the DC lowvoltage VSS; a first capacitor Cst1, and an upper electrode plate of thefirst capacitor Cst1 is electrically coupled to the second circuit pointS(N) and a lower electrode plate of the first capacitor Cst1 iselectrically coupled to the first circuit point P(N);

the second pull-down holding part comprises: a ninth thin filmtransistor T9, and a gate of the ninth thin film transistor T9 iselectrically coupled to the third circuit point K(N), and a drain iselectrically coupled to the Nth horizontal scanning line G(N), and asource is inputted with the DC low voltage VSS; a tenth thin filmtransistor T10, and a gate of the tenth thin film transistor T10 iselectrically coupled to the third circuit point K(N), and a drain iselectrically coupled to the Nth gate signal point Q(N), and a source isinputted with the DC low voltage VSS; an eleventh thin film transistorT11, and a gate of the eleventh thin film transistor T11 is electricallycoupled to a second low frequency clock LC2 or a second high frequencyclock XCK, and a drain is electrically coupled to a second low frequencyclock LC2 or a second high frequency clock XCK, and a source iselectrically coupled to a fourth circuit point T(N); a twelfth thin filmtransistor T12, and a gate of the twelfth thin film transistor T12 iselectrically coupled to the Nth gate signal point Q(N), and a drain iselectrically coupled to the fourth circuit point T(N), and a source isinputted with the DC low voltage VSS; a thirteenth thin film transistorT13, and a gate of the thirteenth thin film transistor T13 iselectrically coupled to a N−1th gate signal point Q(N−1), a drain iselectrically coupled to the third circuit point K(N), and a source isinputted with the DC low voltage VSS; a fourteenth thin film transistorT14, and a gate of the fourteenth thin film transistor T14 iselectrically coupled to a N+1th horizontal scan line G(N+1), and a drainis electrically coupled to the third circuit point K(N), and a source iselectrically coupled to the Nth gate signal point Q(N); a fifteenth thinfilm transistor T15, and a gate of the fifteenth thin film transistorT15 is electrically coupled to a first low frequency clock LC1 or afirst high frequency clock CK, and a drain is a second low frequencyclock LC2 or a second high frequency clock XCK, and a source iselectrically coupled to the fourth circuit point T(N); a sixteenth thinfilm transistor T16, and a gate of the sixteenth thin film transistorT16 is electrically coupled to the Nth transmission signal ST(N), and adrain is electrically coupled to the third circuit point K(N), and asource is inputted with the DC low voltage VSS; a second capacitor Cst2,and an upper electrode plate of the second capacitor Cst2 iselectrically coupled to the fourth circuit point T(N) and a lowerelectrode plate of the second capacitor Cst2 is electrically coupled tothe third circuit point K(N).

The pull-up controlling part comprises: a seventeenth thin filmtransistor T17, and a gate of the seventeenth thin film transistor T17is inputted with a transmission signal ST(N−1) from a N−1th GOA unit,and a drain is electrically coupled to a N−1th horizontal scan lineG(N−1), and a source is electrically coupled to the Nth gate signalpoint Q(N); the pull-up part comprises an eighteenth thin filmtransistor T18, and a gate of the eighteenth thin film transistor T18 iselectrically coupled to the Nth gate signal point Q(N), and a drain isinputted with a first high frequency clock CK or a second high frequencyclock XCK, and a source is electrically coupled to the Nth horizontalscan line G(N); the transmission part comprises a nineteenth thin filmtransistor T19, and a gate of the nineteenth thin film transistor T19 iselectrically coupled to the Nth gate signal point Q(N), and a drain isinputted with the first high frequency clock CK or the second highfrequency clock XCK, and a source outputs a Nth transmission signalST(N); the first pull-down part comprises a twentieth thin filmtransistor T20, and a gate of the twentieth thin film transistor T20 iselectrically coupled to a N+2th horizontal scan line G(N+2), and a drainis electrically coupled to the Nth horizontal scan line G(N), and asource is inputted with the DC low voltage VSS; a twenty-first thin filmtransistor T21, and a gate of the twenty-first thin film transistor T21is electrically coupled to the N+2th horizontal scan line G(N+2), and adrain is electrically coupled to the Nth gate signal point Q(N), and asource is inputted with the DC low voltage VSS; the bootstrap capacitorpart comprises a bootstrap capacitor Cb.

In the first level connection, the gate of the fifth thin filmtransistor T5 is electrically coupled to a circuit activation signalSTV; the gate of the thirteenth thin film transistor T13 is electricallycoupled to the circuit activation signal; the gate and the drain of theseventeenth thin film transistor T17 are both electrically coupled tothe circuit activation signal STV.

In the last level connection, the gate of the sixth thin film transistorT6 is electrically coupled to a circuit activation signal STV; the gateof the fourteenth thin film transistor T 14 is electrically coupled tothe circuit activation signal; the gate of the twentieth thin filmtransistor T20 is electrically coupled to the 2th horizontal scan lineG(2); the gate of the twenty-first thin film transistor T21 iselectrically coupled to the 2th horizontal scan line G(2).

The pull-down holding part further comprises a third capacitor Cst3, andan upper electrode plate of the third capacitor Cst3 is electricallycoupled to the first circuit point P(N), and a lower electrode plate ofthe third capacitor Cst3 is electrically coupled to the DC low voltageVSS; circuit structures of the first pull-down holding part and thesecond pull-down holding part are the same.

The first pull-down holding part further comprises a twenty-second thinfilm transistor T22, and a gate of the twenty-second thin filmtransistor T22 is electrically coupled to the N+1th horizontal scan lineG(N+1), and a drain is electrically coupled to the second circuit pointS(N), and a source is inputted with the DC low voltage VSS; circuitstructures of the first pull-down holding part and the second pull-downholding part are the same.

The pull-down holding part further comprises a third capacitor Cst3, andan upper electrode plate of the third capacitor Cst3 is electricallycoupled to the first circuit point P(N), and a lower electrode plate ofthe third capacitor Cst3 is electrically coupled to the DC low voltageVSS; a twenty-second thin film transistor T22, and a gate of thetwenty-second thin film transistor T22 is electrically coupled to theN+1th horizontal scan line, and a drain is electrically coupled to thesecond circuit point T20, and a source is inputted with the DC lowvoltage VSS; circuit structures of the first pull-down holding part andthe second pull-down holding part are the same.

The first high frequency clock CK and the second high frequency clockXCK are two high frequency clocks that phases are completely opposite;the first low frequency clock LC1 and the second low frequency clock LC2are two low frequency clocks that phases are completely opposite.

In the first pull-down part, the gate of the twentieth thin filmtransistor T20 and the gate of the twenty-first thin film transistor T21are both electrically coupled to the N+2th horizontal scan line G(N+2)mainly for realizing three stages of a voltage level of the Nth gatesignal point Q(N), and in the first stage, the voltage level is raisedto a high voltage level and kept for a certain period, and in the secondstage, the voltage level is raised to another high voltage level andkept for another certain period based on the first stage, and in thethird stage, the voltage level is dropped to the high voltage level ofthe first stage to be hold based on the second stage, and thenself-compensation of the threshold voltage is implemented in the thirdstage.

The voltage level of the Nth gate signal point Q(N) has the threestages, and a variation of the voltage level in the third stage ismainly influenced by the sixth thin film transistor T6 or the fourteenththin film transistor T14.

The benefits of the present invention are: the present inventionprovides a self-compensating gate driving circuit. By utilizing thebootstrap function of the capacitor to control the first circuit pointP(N) or the third circuit point K(N) of the pull-down holding part, itis possible to carry out the function of detecting the threshold voltageof the thin film transistor and to store the threshold voltage at thefirst circuit point P(N) or the third circuit point K(N). Accordingly,the variation of the control voltage at the first circuit point P(N) orthe third circuit point K(N) along with the threshold voltage drift ofthe thin film transistor can be realized. The present invention designsthe self-compensating pull-down holding part to promote the reliabilityof the long term operation for the gate driving circuit and to diminishthe influence of the threshold voltage drift to the operation of thegate driving circuit.

In order to better understand the characteristics and technical aspectof the invention, please refer to the following detailed description ofthe present invention is concerned with the diagrams, however, providereference to the accompanying drawings and description only and is notintended to be limiting of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The technical solution, as well as beneficial advantages, of the presentinvention will be apparent from the following detailed description of anembodiment of the present invention, with reference to the attacheddrawings.

In drawings,

FIG. 1 is a structural diagram of a commonly employed gate drivingcircuit according to prior art;

FIG. 2a is a relationship diagram of the overall current logarithm andthe voltage curve of the thin film transistor before and after thethreshold voltage drift;

FIG. 2b is a relationship diagram of the overall current and the voltagecurve of the thin film transistor before and after the threshold voltagedrift;

FIG. 3 is a single level structural diagram of a self-compensating gatedriving circuit according to the present invention;

FIG. 4 is a single level structural diagram of the first levelconnection in the self-compensating gate driving circuit according tothe present invention;

FIG. 5 is a single level structural diagram of the last level connectionin the self-compensating gate driving circuit according to the presentinvention;

FIG. 6 is a circuit diagram of the first embodiment of the firstpull-down holding part employed in FIG. 3;

FIG. 7a is a sequence diagram of gate driving circuit shown in FIG. 3before the threshold voltage drift;

FIG. 7b is a sequence diagram of gate driving circuit shown in FIG. 3after the threshold voltage drift;

FIG. 8 is a circuit diagram of the second embodiment of the firstpull-down holding part employed in FIG. 3;

FIG. 9 is a circuit diagram of the third embodiment of the firstpull-down holding part employed in FIG. 3;

FIG. 10 is a circuit diagram of the fourth embodiment of the firstpull-down holding part employed in FIG. 3.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Embodiments of the present invention are described in detail with thetechnical matters, structural features, achieved objects, and effectswith reference to the accompanying drawings as follows.

Please refer to FIG. 3, which is a single level structural diagram of aself-compensating gate driving circuit according to the presentinvention. The self-compensating gate driving circuit comprises: aplurality of GOA units which are cascade connected, and a Nth GOA unitcontrols charge to a Nth horizontal scanning line G(n) in a display areaand the Nth GOA unit comprises a pull-up controlling part 1, a pull-uppart 2, a transmission part 3, a first pull-down part 4, a bootstrapcapacitor part 5 and a pull-down holding part 6; the pull-up part 2, thefirst pull-down part 4, the bootstrap capacitor part 5 and the pull-downholding circuit 6 are respectively coupled to a Nth gate signal pointQ(N) and the Nth horizontal scanning line G(n), and the pull-upcontrolling part 1 and the transmission part 3 are respectively coupledto the Nth gate signal point Q(N), and the pull-down holding part 6 isinputted with a DC low voltage VSS;

the pull-down holding part 6 comprises a first pull-down holding part 61and a second pull-down holding part 62 to alternately work;

the first pull-down holding part 61 comprises: a first thin filmtransistor T1, and a gate of the first thin film transistor T1 iselectrically coupled to the first circuit point P(N), and a drain iselectrically coupled to the Nth horizontal scanning line G(N), and asource is inputted with the DC low voltage VSS; a second thin filmtransistor T2, and a gate of the second thin film transistor T2 iselectrically coupled to the first circuit point P(N), and a drain iselectrically coupled to the Nth gate signal point Q(N), and a source isinputted with the DC low voltage VSS; a third thin film transistor T3,and a gate of the third thin film transistor T3 is electrically coupledto a first low frequency clock or a first high frequency clock, and adrain is electrically coupled to the first low frequency clock or afirst high frequency clock, and a source is electrically coupled to asecond circuit point S(N); a fourth thin film transistor T4, and a gateof the fourth thin film transistor T4 is electrically coupled to the Nthgate signal point Q(N), and a drain is electrically coupled to thesecond circuit point S(N), and a source is inputted with the DC lowvoltage VSS; a fifth thin film transistor T5, and a gate of the fifththin film transistor T5 is electrically coupled to a N−1th transmissionsignal ST(N−1), a drain is electrically coupled to the first circuitpoint P(N), and a source is inputted with the DC low voltage VSS; asixth thin film transistor T6, and a gate of the sixth thin filmtransistor T6 is electrically coupled to a N+1th horizontal scan lineG(N+1), and a drain is electrically coupled to the first circuit pointP(N), and a source is electrically coupled to the Nth gate signal pointQ(N); a seventh thin film transistor T7, and a gate of the seventh thinfilm transistor T7 is electrically coupled to a second low frequencyclock LC2 or a second high frequency clock XCK, and a drain is a firstlow frequency clock LC1 or a first high frequency clock CK, and a sourceis electrically coupled to the second circuit point S(N); an eighth thinfilm transistor T8, and a gate of the eighth thin film transistor T8 iselectrically coupled to a Nth transmission signal ST(N), and a drain iselectrically coupled to the first circuit point P(N), and a source isinputted with the DC low voltage VSS; a first capacitor Cst1, and anupper electrode plate of the first capacitor Cst1 is electricallycoupled to the second circuit point S(N) and a lower electrode plate ofthe first capacitor Cst1 is electrically coupled to the first circuitpoint P(N);

the second pull-down holding part 62 comprises: a ninth thin filmtransistor T9, and a gate of the ninth thin film transistor T9 iselectrically coupled to the third circuit point K(N), and a drain iselectrically coupled to the Nth horizontal scanning line G(N), and asource is inputted with the DC low voltage VSS; a tenth thin filmtransistor T10, and a gate of the tenth thin film transistor T10 iselectrically coupled to the third circuit point K(N), and a drain iselectrically coupled to the Nth gate signal point Q(N), and a source isinputted with the DC low voltage VSS; an eleventh thin film transistorT11, and a gate of the eleventh thin film transistor T11 is electricallycoupled to a second low frequency clock LC2 or a second high frequencyclock XCK, and a drain is electrically coupled to a second low frequencyclock LC2 or a second high frequency clock XCK, and a source iselectrically coupled to a fourth circuit point T(N); a twelfth thin filmtransistor T12, and a gate of the twelfth thin film transistor T12 iselectrically coupled to the Nth gate signal point Q(N), and a drain iselectrically coupled to the fourth circuit point T(N), and a source isinputted with the DC low voltage VSS; a thirteenth thin film transistorT13, and a gate of the thirteenth thin film transistor T13 iselectrically coupled to a N−1th transmission signal ST(N−1), a drain iselectrically coupled to the third circuit point K(N), and a source isinputted with the DC low voltage VSS; a fourteenth thin film transistorT14, and a gate of the fourteenth thin film transistor T14 iselectrically coupled to a N+1th horizontal scan line G(N+1), and a drainis electrically coupled to the third circuit point K(N), and a source iselectrically coupled to the Nth gate signal point Q(N); a fifteenth thinfilm transistor T15, and a gate of the fifteenth thin film transistorT15 is electrically coupled to a first low frequency clock LC1 or afirst high frequency clock CK, and a drain is a second low frequencyclock LC2 or a second high frequency clock XCK, and a source iselectrically coupled to the fourth circuit point T(N); a sixteenth thinfilm transistor T16, and a gate of the sixteenth thin film transistorT16 is electrically coupled to the Nth transmission signal ST(N), and adrain is electrically coupled to the third circuit point K(N), and asource is inputted with the DC low voltage VSS; a second capacitor Cst2,and an upper electrode plate of the second capacitor Cst2 iselectrically coupled to the fourth circuit point T(N) and a lowerelectrode plate of the second capacitor Cst2 is electrically coupled tothe third circuit point K(N).

The pull-up controlling part 1 comprises: a seventeenth thin filmtransistor T17, and a gate of the seventeenth thin film transistor T17is inputted with a transmission signal ST(N−1) from a N−1th GOA unit,and a drain is electrically coupled to a N−1th horizontal scan lineG(N−1), and a source is electrically coupled to the Nth gate signalpoint Q(N); the pull-up part 2 comprises an eighteenth thin filmtransistor T18, and a gate of the eighteenth thin film transistor T18 iselectrically coupled to the Nth gate signal point Q(N), and a drain isinputted with a first high frequency clock CK or a second high frequencyclock XCK, and a source is electrically coupled to the Nth horizontalscan line G(N); the transmission part 3 comprises a nineteenth thin filmtransistor T19, and a gate of the nineteenth thin film transistor T19 iselectrically coupled to the Nth gate signal point Q(N), and a drain isinputted with the first high frequency clock CK or the second highfrequency clock XCK, and a source outputs a Nth transmission signalST(N); the first pull-down part 4 comprises a twentieth thin filmtransistor T20, and a gate of the twentieth thin film transistor T20 iselectrically coupled to a N+2th horizontal scan line G(N+2), and a drainis electrically coupled to the Nth horizontal scan line G(N), and asource is inputted with the DC low voltage VSS; a twenty-first thin filmtransistor T21, and a gate of the twenty-first thin film transistor T21is electrically coupled to the N+2th horizontal scan line G(N+2), and adrain is electrically coupled to the Nth gate signal point Q(N), and asource is inputted with the DC low voltage VSS; the gate of thetwentieth thin film transistor T20 and the gate of the twenty-first thinfilm transistor T21 are both electrically coupled to the N+2thhorizontal scan line G(N+2) mainly for realizing three stages of avoltage level of the Nth gate signal point Q(N), and in the first stage,the voltage level is raised to a high voltage level and kept for acertain period, and in the second stage, the voltage level is raised toanother high voltage level and kept for another certain period based onthe first stage, and in the third stage, the voltage level is dropped tothe high voltage level of the first stage to be hold based on the secondstage, and then self-compensation of the threshold voltage isimplemented in the third stage; the bootstrap capacitor part 5 comprisesa bootstrap capacitor Cb.

The levels of the multi-level horizontal scan line are cyclic. That is,when the symbol N of the Nth horizontal scan line G(N) is the last level(Last), the N+2th horizontal scan line G(N+2) represents the 2thhorizontal scan line G(2); when the symbol N of the Nth horizontal scanline G(N) is next level to the last level (Last−1), the N+2th horizontalscan line G(N+2) represents the 1th horizontal scan line G(1) and etcetera.

Please refer to FIG. 4 in conjunction with FIG. 3. FIG. 4 is a singlelevel structural diagram of the first level connection in theself-compensating gate driving circuit according to the presentinvention, i.e. a gate driving circuit connection diagram when N is 1.The gate of the fifth thin film transistor T5 is electrically coupled toa circuit activation signal STV; the gate of the thirteenth thin filmtransistor T13 is electrically coupled to a circuit activation signalSTV; the gate and the drain of the seventeenth thin film transistor T17are both electrically coupled to the circuit activation signal STV.

Please refer to FIG. 5 in conjunction with FIG. 3. FIG. 5 is a singlelevel structural diagram of the last level connection in theself-compensating gate driving circuit according to the presentinvention, i.e. a gate driving circuit connection diagram when N is thelast. The gate of the sixth thin film transistor T6 is electricallycoupled to a circuit activation signal STV; the gate of the fourteenththin film transistor T14 is electrically coupled to the circuitactivation signal; the gate of the twentieth thin film transistor T20 iselectrically coupled to the 2th horizontal scan line G(2); the gate ofthe twenty-first thin film transistor T21 is electrically coupled to the2th horizontal scan line G(2).

Please refer to FIG. 6, which is a circuit diagram of the firstembodiment of the first pull-down holding part employed in FIG. 3. Thefirst pull-down holding part comprises: a first thin film transistor T1,and a gate of the first thin film transistor T1 is electrically coupledto the first circuit point P(N), and a drain is electrically coupled tothe Nth horizontal scanning line G(N), and a source is inputted with theDC low voltage VSS; a second thin film transistor T2, and a gate of thesecond thin film transistor T2 is electrically coupled to the firstcircuit point P(N), and a drain is electrically coupled to the Nth gatesignal point Q(N), and a source is inputted with the DC low voltage VSS;a third thin film transistor T3, and a gate of the third thin filmtransistor T3 is electrically coupled to a first low frequency clock ora first high frequency clock, and a drain is electrically coupled to thefirst low frequency clock or a first high frequency clock, and a sourceis electrically coupled to a second circuit point S(N); a fourth thinfilm transistor T4, and a gate of the fourth thin film transistor T4 iselectrically coupled to the Nth gate signal point Q(N), and a drain iselectrically coupled to the second circuit point S(N), and a source isinputted with the DC low voltage VSS. The fourth thin film transistor T4is mainly to pull down the second circuit point S(N) during itsfunctioning period to realize the objective of controlling the firstcircuit point P(N) by the second circuit point S(N); a fifth thin filmtransistor T5, and a gate of the fifth thin film transistor T5 iselectrically coupled to a N−1th transmission signal ST(N−1), a drain iselectrically coupled to the first circuit point P(N), and a source isinputted with the DC low voltage VSS; a sixth thin film transistor T6,and a gate of the sixth thin film transistor T6 is electrically coupledto a N+1th horizontal scan line G(N+1), and a drain is electricallycoupled to the first circuit point P(N), and a source is electricallycoupled to the Nth gate signal point Q(N). The objective of such designis to utilize the voltage level in the third stage of the three stagesof the Nth gate signal point Q(N) to detect the threshold voltage and tostore the voltage level of the threshold voltage at the first circuitpoint P(N); a seventh thin film transistor T7, and a gate of the sevenththin film transistor is electrically coupled to a second low frequencyclock LC2 or a second high frequency clock XCK, and a drain is a firstlow frequency clock LC1 or a first high frequency clock CK, and a sourceis electrically coupled to the second circuit point S(N); an eighth thinfilm transistor T8, and a gate of the eighth thin film transistor T8 iselectrically coupled to a Nth transmission signal ST(N), and a drain iselectrically coupled to the first circuit point P(N), and a source isinputted with the DC low voltage VSS; a first capacitor Cst1, and anupper electrode plate of the first capacitor Cst1 is electricallycoupled to the second circuit point S(N) and a lower electrode plate ofthe first capacitor Cst1 is electrically coupled to the first circuitpoint P(N). The circuit structures of the first pull-down holding partand the second pull-down holding part are the same.

The gate of the fifth thin film transistor T5 and the gate of the eighththin film transistor T8 are respectively electrically coupled to theN−1th transmission signal ST(N−1) and the Nth transmission signal ST(N).The gate-source voltages Vgs of the fifth thin film transistor T5 andthe eighth thin film transistor T8 are smaller than zero, Vgs<0 becausethe low voltage levels of the N−1th transmission signal ST(N−1) and theNth transmission signal ST(N) in the non functioning period are smallerthan the DC low voltage VSS. Accordingly, the leakage of the fifth thinfilm transistor T5 and the eighth thin film transistor T8 in the nonfunctioning period can be effectively reduced.

Please refer to FIGS. 7a, 7b in conjunction with FIG. 3. FIG. 7a is asequence diagram of gate driving circuit shown in FIG. 3 before thethreshold voltage drift. FIG. 7b is a sequence diagram of gate drivingcircuit shown in FIG. 3 after the threshold voltage drift. In FIGS. 7a,7b , the STV signal is a circuit activation signal. The first highfrequency clock CK and the second high frequency clock XCK are two highfrequency clocks that phases are completely opposite and the first lowfrequency clock LC1 and the second low frequency clock LC2 are two lowfrequency clocks that phases are completely opposite. G(N−1) is an N−1thhorizontal scan line, i.e. the former level scan output signal. ST(N−1)is an N−1th transmission signal, i.e. the former level transmissionsignal. Q(N−1) is an N−1th gate signal point, i.e. the former level gatesignal point. Q(N) is an Nth gate signal point, i.e. the present levelgate signal point.

FIGS. 7a, 7b are sequence diagrams that the first low frequency clockLC1 in the working state, i.e. the sequence diagrams of the pull-downholding part 61 in the working state. As shown in figures, the voltagelevel of the Nth gate signal point Q(N) has the three stages, and in thefirst stage, the voltage level is raised to a high voltage level andkept for a certain period, and in the second stage, the voltage level israised to another high voltage level and kept for another certain periodbased on the first stage, and in the third stage, the voltage level isdropped to the high voltage level of the first stage to be hold based onthe second stage, and the variation of the voltage level in the thirdstage is mainly influenced by the sixth thin film transistor T6. Asshown in FIG. 7a , at the initial time T0 when the liquid crystal panelis just lighted, the threshold voltage Vth is smaller. That is, thedrift of the threshold voltage Vth has not occurred because the gatedriving circuit did not go through a long term operation. The voltagelevel at the Nth gate signal point Q(N) in the third stage is lower andthe voltage level at the corresponding first circuit point P(N) islower, too. As shown in FIG. 7b , the threshold voltage Vth at the gatesignal point Q(N) in the third stage is drifted and raised under thestress of the voltage. The objective of detecting the threshold voltagesof the first thin film transistor T1 and the second thin film transistorT2 can be achieved thereby.

As shown in FIG. 7a and FIG. 7b , the working procedure of the gatedriving circuit shown in FIG. 3 is: the sixth thin film transistor T6 isactivated when the N+1th horizontal scan line G(N+1) is conducted. Now,the voltage levels of the Nth gate signal point Q(N) and the firstcircuit point P(N) are the same. The second thin film transistor T2becomes equivalent to a diode-connection. The threshold voltage valuesof the first thin film transistor T1 and the second thin film transistorT2 can be stored at the first circuit point P(N) by the sixth thin filmtransistor T6 in the third stage of the Nth gate signal point Q(N).Thus, along with the drifts of the threshold voltages Vth, the voltagelevel of the Nth gate signal point Q(N) in the third stage is raised,and the voltage level of the threshold voltage stored at the firstcircuit point P(N) is raised, too. Then, the second circuit point S(N)raises the first circuit point P(N) by the first capacitor Cst1 tocompensate the variation of the threshold voltage.

As shown in FIGS. 7a, 7b , before and after the threshold voltage drift,the voltage levels of the Nth gate signal point Q(N) and the firstcircuit point P(N) obviously change. Particularly, the voltage levelincrease of the first circuit point P(N) can effectively decrease theinfluence of the threshold voltage drift to the activation currents ofthe first thin film transistor T1 and the second thin film transistorT2. Accordingly, the Nth horizontal scan line G(N) and the Nth gatesignal point Q(N) can still keep in a low voltage level state even aftera long term operation.

Similarly, as referring to the second low frequency clock LC2 in theworking state (not shown), the second pull-down holding part 62 isfunctioning. the voltage level of the Nth gate signal point Q(N) has thethree stages, and in the first stage, the voltage level is raised to ahigh voltage level and kept for a certain period, and in the secondstage, the voltage level is raised to another high voltage level andkept for another certain period based on the first stage, and in thethird stage, the voltage level is dropped to the high voltage level ofthe first stage to be hold based on the second stage, and the variationof the voltage level in the third stage is mainly influenced by thefourteenth thin film transistor T14. In the third stage, the voltagelevel in the third stage is lower before the drift of the thresholdvoltage occurs and is raised after the drift of the threshold voltageoccurs. The objective of detecting the threshold voltages of the ninththin film transistor T9 and the tenth thin film transistor T10 can beachieved thereby. Here, the working procedure of the gate drivingcircuit shown in FIG. 3 is: the fourteenth thin film transistor T14 isactivated when the N+1th horizontal scan line G(N+1) is conducted. Now,the voltage levels of the Nth gate signal point Q(N) and the thirdcircuit point K(N) are the same. The tenth thin film transistor T10becomes equivalent to a diode-connection. The threshold voltage valuesof the ninth thin film transistor T9 and the tenth thin film transistorT10 can be stored at the third circuit point K(N) by the fourteenth thinfilm transistor T14 in the third stage of the Nth gate signal pointQ(N). Thus, along with the drifts of the threshold voltages Vth, thevoltage level of the Nth gate signal point Q(N) in the third stage israised, and the voltage level of the threshold voltage stored at thethird circuit point K(N) is raised, too. Then, the fourth circuit pointT(N) raises the third circuit point K(N) by the second capacitor Cst2 tocompensate the variation of the threshold voltage. Accordingly, the Nthhorizontal scan line G(N) and the Nth gate signal point Q(N) can stillkeep in a low voltage level state even after a long term operation.

As shown in FIGS. 7a, 7b , the first low frequency clock LC1 and thesecond low frequency clock LC2 alternately work. That is, the firstpull-down holding part 61 and the second pull-down holding part 62alternately work. The working time of each part can be reduced thereby.The suffered voltage stress is decreased to promote the reliability ofthe entire circuit.

Please refer to FIG. 8 in conjunction with FIG. 6. FIG. 8 is a circuitdiagram of the second embodiment of the first pull-down holding partemployed in FIG. 3. In FIG. 8, a third capacitor Cst3 is added on thebasis of FIG. 6. An upper electrode plate of the third capacitor Cst3 iselectrically coupled to the first circuit point P(N) and a lowerelectrode plate of the third capacitor Cst3 is inputted with the DC lowvoltage VSS. The main function of the third capacitor Cst3 is to storethe threshold voltage. The circuit structures of the first pull-downholding part and the second pull-down holding part are the same. Certainparasitic capacitance exist in the first thin film transistor T1 and thesecond thin film transistor T2 themselves and the function of the thirdcapacitor Cst3 can be replaced thereby. Therefore, in actual circuitdesign, the third capacitor Cst3 can be omitted. The circuit structuresof the first pull-down holding part and the second pull-down holdingpart are the same.

Please refer to FIG. 9 in conjunction with FIG. 6. FIG. 9 is a circuitdiagram of the third embodiment of the first pull-down holding partemployed in FIG. 3. In FIG. 9, a twenty-second thin film transistor T22is added on the basis of FIG. 6. A gate of the twenty-second thin filmtransistor T22 is electrically coupled to the N+1th horizontal scan lineG(N+1), and a drain is electrically coupled to the second circuit pointS(N), and a source is inputted with the DC low voltage VSS; the circuitstructures of the first pull-down holding part and the second pull-downholding part are the same. The main objective of the twenty-second thinfilm transistor T22 is to compensate that voltage level of the Nth gatesignal point Q(N) in the first stage is not high enough and leads to ainsufficient pulling down of the voltage level to the second circuitpoint S(N) in the functioning period. The circuit structures of thefirst pull-down holding part and the second pull-down holding part arethe same.

Please refer to FIG. 10 in conjunction with FIG. 6. FIG. 10 is a circuitdiagram of the fourth embodiment of the first pull-down holding partemployed in FIG. 3. What is added in FIG. 10 on the basis of FIG. 6 is:a third capacitor Cst3, and an upper electrode plate of the thirdcapacitor Cst3 is electrically coupled to the first circuit point P(N)and a lower electrode plate of the third capacitor Cst3 is inputted withthe DC low voltage VSS; a twenty-second thin film transistor T22, and agate of the twenty-second thin film transistor T22 is electricallycoupled to the N+1th horizontal scan line G(N+1), and a drain iselectrically coupled to the second circuit point S(N), and a source isinputted with the DC low voltage VSS. The circuit structures of thefirst pull-down holding part and the second pull-down holding part arethe same.

The first pull-down holding part 61 and the second pull-down holdingpart 62 of the structure gate driving circuit shown in FIG. 3 can bereplaced with any one design of FIG. 6, FIG. 8, FIG. 9 and FIG. 10. Thecircuit structures of the first pull-down holding part and the secondpull-down holding part are the same. The sequence diagrams of thereplaced gate driving circuit are the same as shown in FIG. 7a and FIG.7b . The working procedures are the same as described related with thegate driving circuit shown in FIG. 3. The repeated description isomitted here.

In conclusion, the present invention provides a self-compensating gatedriving circuit. As considering the most possible failure issue of thepull-down holding part suffered with serious voltage stress understructure of the gate driving circuit according to prior art, byutilizing the bootstrap function of the capacitor to control the firstcircuit point P(N) or the third circuit point K(N) of the pull-downholding part, it is possible to carry out the function of detecting thethreshold voltage of the thin film transistor and to store the thresholdvoltage at the first circuit point P(N) or the third circuit point K(N).Accordingly, the variation of the control voltage at the first circuitpoint P(N) or the third circuit point K(N) along with the thresholdvoltage drift of the thin film transistor can be realized. The presentinvention designs the self-compensating pull-down holding part topromote the reliability of the long term operation for the gate drivingcircuit and to diminish the influence of the threshold voltage drift tothe operation of the gate driving circuit.

Above are only specific embodiments of the present invention, the scopeof the present invention is not limited to this, and to any persons whoare skilled in the art, change or replacement which is easily derivedshould be covered by the protected scope of the invention. Thus, theprotected scope of the invention should go by the subject claims.

What is claimed is:
 1. A self-compensating gate driving circuit,comprising: a plurality of gate driver on array units which are cascadeconnected, and a Nth gate driver on array unit controls charge to a Nthhorizontal scanning line in a display area, and the Nth gate driver onarray unit comprises a pull-up controlling part, a pull-up part, atransmission part, a first pull-down part, a bootstrap capacitor partand a pull-down holding part; the pull-up part, the first pull-downpart, the bootstrap capacitor part and the pull-down holding circuit arerespectively coupled to a Nth gate signal point and the Nth horizontalscanning line, and the pull-up controlling part and the transmissionpart are respectively coupled to the Nth gate signal point, and thepull-down holding part is inputted with a DC low voltage; the pull-downholding part comprises a first pull-down holding part and a secondpull-down holding part to alternately work; the first pull-down holdingpart comprises: a first thin film transistor, and a gate of the firstthin film transistor is electrically coupled to the first circuit point,and a drain is electrically coupled to the Nth horizontal scanning line,and a source is inputted with the DC low voltage; a second thin filmtransistor, and a gate of the second thin film transistor iselectrically coupled to the first circuit point, and a drain iselectrically coupled to the Nth gate signal point, and a source isinputted with the DC low voltage; a third thin film transistor, and agate of the third thin film transistor is electrically coupled to afirst low frequency clock or a first high frequency clock, and a drainis electrically coupled to a first low frequency clock or a first highfrequency clock, and a source is electrically coupled to a secondcircuit point; a fourth thin film transistor, and a gate of the fourththin film transistor is electrically coupled to the Nth gate signalpoint, and a drain is electrically coupled to the second circuit point,and a source is inputted with the DC low voltage; a fifth thin filmtransistor, and a gate of the fifth thin film transistor is electricallycoupled to a N−1th transmission signal, a drain is electrically coupledto the first circuit point, and a source is inputted with the DC lowvoltage; a sixth thin film transistor, and a gate of the sixth thin filmtransistor is electrically coupled to a N+1th horizontal scan line, anda drain is electrically coupled to the first circuit point, and a sourceis electrically coupled to the Nth gate signal point; a seventh thinfilm transistor, and a gate of the seventh thin film transistor iselectrically coupled to a second low frequency clock or a second highfrequency clock, and a drain is a first low frequency clock or a firsthigh frequency clock, and a source is electrically coupled to the secondcircuit point; an eighth thin film transistor, and a gate of the eighththin film transistor is electrically coupled to a Nth transmissionsignal, and a drain is electrically coupled to the first circuit point,and a source is inputted with the DC low voltage; a first capacitor, andan upper electrode plate of the first capacitor is electrically coupledto the second circuit point and a lower electrode plate of the firstcapacitor is electrically coupled to the first circuit point; the secondpull-down holding part comprises: a ninth thin film transistor, and agate of the ninth thin film transistor is electrically coupled to thethird circuit point, and a drain is electrically coupled to the Nthhorizontal scanning line, and a source is inputted with the DC lowvoltage; a tenth thin film transistor, and a gate of the tenth thin filmtransistor is electrically coupled to the third circuit point, and adrain is electrically coupled to the Nth gate signal point, and a sourceis inputted with the DC low voltage; an eleventh thin film transistor,and a gate of the eleventh thin film transistor is electrically coupledto a second low frequency clock or a second high frequency clock, and adrain is electrically coupled to a second low frequency clock or asecond high frequency clock, and a source is electrically coupled to afourth circuit point; a twelfth thin film transistor, and a gate of thetwelfth thin film transistor is electrically coupled to the Nth gatesignal point, and a drain is electrically coupled to the fourth circuitpoint, and a source is inputted with the DC low voltage; a thirteenththin film transistor, and a gate of the thirteenth thin film transistoris electrically coupled to a N−1th transmission signal, a drain iselectrically coupled to the third circuit point, and a source isinputted with the DC low voltage; a fourteenth thin film transistor, anda gate of the fourteenth thin film transistor is electrically coupled toa N+1th horizontal scan line, and a drain is electrically coupled to thethird circuit point, and a source is electrically coupled to the Nthgate signal point; a fifteenth thin film transistor, and a gate of thefifteenth thin film transistor is electrically coupled to a first lowfrequency clock or a first high frequency clock, and a drain is a secondlow frequency clock or a second high frequency clock, and a source iselectrically coupled to the fourth circuit point; a sixteenth thin filmtransistor, and a gate of the sixteenth thin film transistor iselectrically coupled to the Nth transmission signal, and a drain iselectrically coupled to the third circuit point, and a source isinputted with the DC low voltage; a second capacitor, and an upperelectrode plate of the second capacitor is electrically coupled to thefourth circuit point and a lower electrode plate of the second capacitoris electrically coupled to the third circuit point.
 2. Theself-compensating gate driving circuit according to claim 1, wherein thepull-up controlling part comprises: a seventeenth thin film transistor,and a gate of the seventeenth thin film transistor is inputted with atransmission signal from a N−1th gate driver on array unit, and a drainis electrically coupled to a N−1th horizontal scan line, and a source iselectrically coupled to the Nth gate signal point; the pull-up partcomprises an eighteenth thin film transistor, and a gate of theeighteenth thin film transistor is electrically coupled to the Nth gatesignal point, and a drain is inputted with a first high frequency clockor a second high frequency clock, and a source is electrically coupledto the Nth horizontal scan line; the transmission part comprises anineteenth thin film transistor, and a gate of the nineteenth thin filmtransistor is electrically coupled to the Nth gate signal point, and adrain is inputted with the first high frequency clock or the second highfrequency clock, and a source outputs a Nth transmission signal; thefirst pull-down part comprises a twentieth thin film transistor, and agate of the twentieth thin film transistor is electrically coupled to aN+2th horizontal scan line, and a drain is electrically coupled to theNth horizontal scan line, and a source is inputted with the DC lowvoltage; a twenty-first thin film transistor, and a gate of thetwenty-first thin film transistor is electrically coupled to the N+2thhorizontal scan line, and a drain is electrically coupled to the Nthgate signal point, and a source is inputted with the DC low voltage; thebootstrap capacitor part comprises a bootstrap capacitor.
 3. Theself-compensating gate driving circuit according to claim 2, wherein inthe first level connection, the gate of the fifth thin film transistoris electrically coupled to a circuit activation signal; the gate of thethirteenth thin film transistor is electrically coupled to the circuitactivation signal; the gate and the drain of the seventeenth thin filmtransistor are both electrically coupled to the circuit activationsignal.
 4. The self-compensating gate driving circuit according to claim2, wherein in the last level connection, the gate of the sixth thin filmtransistor is electrically coupled to a circuit activation signal; thegate of the fourteenth thin film transistor is electrically coupled tothe circuit activation signal; the gate of the twentieth thin filmtransistor is electrically coupled to the 2th horizontal scan line; thegate of the twenty-first thin film transistor is electrically coupled tothe 2th horizontal scan line.
 5. The self-compensating gate drivingcircuit according to claim 1, wherein the pull-down holding part furthercomprises a third capacitor, and an upper electrode plate of the thirdcapacitor is electrically coupled to the first circuit point, and alower electrode plate of the third capacitor is inputted with the DC lowvoltage; circuit structures of the first pull-down holding part and thesecond pull-down holding part are the same.
 6. The self-compensatinggate driving circuit according to claim 1, wherein the first pull-downholding part further comprises a twenty-second thin film transistor, anda gate of the thirteenth thin film transistor is electrically coupled tothe N+1th horizontal scan line, and a drain is electrically coupled tothe second circuit point, and a source is inputted with the DC lowvoltage; circuit structures of the first pull-down holding part and thesecond pull-down holding part are the same.
 7. The self-compensatinggate driving circuit according to claim 1, wherein the pull-down holdingpart further comprises a third capacitor, and an upper electrode plateof the third capacitor is electrically coupled to the first circuitpoint, and a lower electrode plate of the third capacitor iselectrically coupled to the DC low voltage; a twenty-second thin filmtransistor, and a gate of the twenty-second thin film transistor iselectrically coupled to the N+1th horizontal scan line, and a drain iselectrically coupled to the second circuit point, and a source isinputted with the DC low voltage; circuit structures of the firstpull-down holding part and the second pull-down holding part are thesame.
 8. The self-compensating gate driving circuit according to claim2, wherein the first high frequency clock and the second high frequencyclock are two high frequency clocks that phases are completely opposite;the first low frequency clock and the second low frequency clock are twolow frequency clocks that phases are completely opposite.
 9. Theself-compensating gate driving circuit according to claim 2, wherein inthe first pull-down part, the gate of the twentieth thin film transistorand the gate of the twenty-first thin film transistor are bothelectrically coupled to the N+2th horizontal scan line mainly forrealizing three stages of a voltage level of the Nth gate signal point,and in the first stage, the voltage level is raised to a high voltagelevel and kept for a certain period, and in the second stage, thevoltage level is raised to another high voltage level and kept foranother certain period based on the first stage, and in the third stage,the voltage level is dropped to the high voltage level of the firststage to be hold based on the second stage, and then self-compensationof the threshold voltage is implemented in the third stage.
 10. Theself-compensating gate driving circuit according to claim 9, wherein thevoltage level of the Nth gate signal point has the three stages, and avariation of the voltage level in the third stage is mainly influencedby the sixth thin film transistor or the fourteenth thin filmtransistor.
 11. A self-compensating gate driving circuit, comprising: aplurality of gate driver on array units which are cascade connected, anda Nth gate driver on array unit controls charge to a Nth horizontalscanning line in a display area, and the Nth gate driver on array unitcomprises a pull-up controlling part, a pull-up part, a transmissionpart, a first pull-down part, a bootstrap capacitor part and a pull-downholding part; the pull-up part, the first pull-down part, the bootstrapcapacitor part and the pull-down holding circuit are respectivelycoupled to a Nth gate signal point and the Nth horizontal scanning line,and the pull-up controlling part and the transmission part arerespectively coupled to the Nth gate signal point, and the pull-downholding part is inputted with a DC low voltage; the pull-down holdingpart comprises a first pull-down holding part and a second pull-downholding part to alternately work; the first pull-down holding partcomprises: a first thin film transistor, and a gate of the first thinfilm transistor is electrically coupled to the first circuit point, anda drain is electrically coupled to the Nth horizontal scanning line, anda source is inputted with the DC low voltage; a second thin filmtransistor, and a gate of the second thin film transistor iselectrically coupled to the first circuit point, and a drain iselectrically coupled to the Nth gate signal point, and a source isinputted with the DC low voltage; a third thin film transistor, and agate is electrically coupled to a first low frequency clock or a firsthigh frequency clock, and a drain is electrically coupled to a first lowfrequency clock or a first high frequency clock, and a source iselectrically coupled to a second circuit point; a fourth thin filmtransistor, and a gate of the fourth thin film transistor iselectrically coupled to the Nth gate signal point, and a drain iselectrically coupled to the second circuit point, and a source isinputted with the DC low voltage; a fifth thin film transistor, and agate of the fifth thin film transistor is electrically coupled to aN−1th transmission signal, a drain is electrically coupled to the firstcircuit point, and a source is inputted with the DC low voltage; a sixththin film transistor, and a gate of the sixth thin film transistor iselectrically coupled to a N+1th horizontal scan line, and a drain iselectrically coupled to the first circuit point, and a source iselectrically coupled to the Nth gate signal point; a seventh thin filmtransistor, and a gate of the seventh thin film transistor iselectrically coupled to a second low frequency clock or a second highfrequency clock, and a drain is a first low frequency clock or a firsthigh frequency clock, and a source is electrically coupled to the secondcircuit point; an eighth thin film transistor, and a gate of the eighththin film transistor is electrically coupled to a Nth transmissionsignal, and a drain is electrically coupled to the first circuit point,and a source is inputted with the DC low voltage; a first capacitor, andan upper electrode plate of the first capacitor is electrically coupledto the second circuit point and a lower electrode plate of the firstcapacitor is electrically coupled to the first circuit point; the secondpull-down holding part comprises: an ninth thin film transistor, and agate of the ninth thin film transistor is electrically coupled to thethird circuit point, and a drain is electrically coupled to the Nthhorizontal scanning line, and a source is inputted with the DC lowvoltage; a tenth thin film transistor, and a gate of the tenth thin filmtransistor is electrically coupled to the third circuit point, and adrain is electrically coupled to the Nth gate signal point, and a sourceis inputted with the DC low voltage; an eleventh thin film transistor,and a gate of the eleventh thin film transistor is electrically coupledto a second low frequency clock or a second high frequency clock, and adrain is electrically coupled to a second low frequency clock or asecond high frequency clock, and a source is electrically coupled to afourth circuit point; a twelfth thin film transistor, and a gate of thetwelfth thin film transistor is electrically coupled to the Nth gatesignal point, and a drain is electrically coupled to the fourth circuitpoint, and a source is inputted with the DC low voltage; a thirteenththin film transistor, and a gate of the thirteenth thin film transistoris electrically coupled to a N−1th transmission signal, a drain iselectrically coupled to the third circuit point, and a source isinputted with the DC low voltage; a fourteenth thin film transistor, anda gate of the fourteenth thin film transistor is electrically coupled toa N+1th horizontal scan line, and a drain is electrically coupled to thethird circuit point, and a source is electrically coupled to the Nthgate signal point; a fifteenth thin film transistor, and a gate of thefifteenth thin film transistor is electrically coupled to a first lowfrequency clock or a first high frequency clock, and a drain is a secondlow frequency clock or a second high frequency clock, and a source iselectrically coupled to the fourth circuit point; a sixteenth thin filmtransistor, and a gate of the sixteenth thin film transistor iselectrically coupled to the Nth transmission signal, and a drain iselectrically coupled to the third circuit point, and a source isinputted with the DC low voltage; a second capacitor, and an upperelectrode plate of the second capacitor is electrically coupled to thefourth circuit point and a lower electrode plate of the second capacitoris electrically coupled to the third circuit point; wherein the pull-upcontrolling part comprises: a seventeenth thin film transistor, and agate of the seventeenth thin film transistor is inputted with atransmission signal from a N−1th gate driver on array unit, and a drainis electrically coupled to a N−1th horizontal scan line, and a source iselectrically coupled to the Nth gate signal point; the pull-up partcomprises an eighteenth thin film transistor, and a gate of theeighteenth thin film transistor is electrically coupled to the Nth gatesignal point, and a drain is inputted with a first high frequency clockor a second high frequency clock, and a source is electrically coupledto the Nth horizontal scan line; the transmission part comprises anineteenth thin film transistor, and a gate of the nineteenth thin filmtransistor is electrically coupled to the Nth gate signal point, and adrain is inputted with the first high frequency clock or the second highfrequency clock, and a source outputs a Nth transmission signal; thefirst pull-down part comprises a twentieth thin film transistor, and agate of the twentieth thin film transistor is electrically coupled to aN+2th horizontal scan line, and a drain is electrically coupled to theNth horizontal scan line, and a source is inputted with the DC lowvoltage; a twenty-first thin film transistor, and a gate of thetwenty-first thin film transistor is electrically coupled to the N+2thhorizontal scan line, and a drain is electrically coupled to the Nthgate signal point, and a source is inputted with the DC low voltage; thebootstrap capacitor part comprises a bootstrap capacitor; wherein in thefirst level connection, the gate of the fifth thin film transistor iselectrically coupled to a circuit activation signal; the gate of thethirteenth thin film transistor is electrically coupled to the circuitactivation signal; the gate and the drain of the seventeenth thin filmtransistor are both electrically coupled to the circuit activationsignal; wherein in the last level connection, the gate of the sixth thinfilm transistor is electrically coupled to a circuit activation signal;the gate of the fourteenth thin film transistor is electrically coupledto the circuit activation signal; the gate of the twentieth thin filmtransistor is electrically coupled to the 2th horizontal scan line; thegate of the twenty-first thin film transistor is electrically coupled tothe 2th horizontal scan line; wherein the first high frequency clock andthe second high frequency clock are two high frequency clocks thatphases are completely opposite; the first low frequency clock and thesecond low frequency clock are two low frequency clocks that phases arecompletely opposite; wherein in the first pull-down part, the gate ofthe twentieth thin film transistor and the gate of the twenty-first thinfilm transistor are both electrically coupled to the N+2th horizontalscan line mainly for realizing three stages of a voltage level of theNth gate signal point, and in the first stage, the voltage level israised to a high voltage level and kept for a certain period, and in thesecond stage, the voltage level is raised to another high voltage leveland kept for another certain period based on the first stage, and in thethird stage, the voltage level is dropped to the high voltage level ofthe first stage to be hold based on the second stage, and thenself-compensation of the threshold voltage is implemented in the thirdstage; wherein the voltage level of the Nth gate signal point has thethree stages, and a variation of the voltage level in the third stage ismainly influenced by the sixth thin film transistor or the fourteenththin film transistor.